이미지는 참조용만

MT47H128M16RT-25E AAT:C

Name: MT47H128M16RT-25E AAT:C
Rating: 4.7 (12 reviews)

DRAM DDR2 2G 128MX16 FBGA

제조업체Micron
Mfr.부분 #MT47H128M16RT-25E AAT:C
패키지
데이터시트 MT47H128M16RT-25E AAT:C DataSheet
재고 있음24808

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Packaging	Tray
Standard Pack Qty	1260

개요

Description

The MT47H128M16RT-25E is a 1 Gigabit (128M x 16) DRAM device produced by Micron Technology, designed for high-performance applications. It employs DDR3 (Double Data Rate 3) technology, which enables data transfer rates of up to 1600 MT/s (million transfers per second) while operating at a core voltage of 1.5V. The "25E" in the part number indicates a specific speed grade, with the device capable of operating reliably at a frequency of 800 MHz.
Key features include a 64-bit data width, various power-saving modes, and support for burst access. The device is commonly used in consumer electronics, computing, and networking applications, where high bandwidth and low latency are critical. The AAT (Automotive AAT) designation indicates that the component is suitable for automotive applications, meeting stringent reliability and performance standards. Overall, the MT47H128M16RT-25E is a versatile and efficient memory solution ideal for modern electronic systems.

Features

The MT47H128M16RT-25E is a DDR3 SDRAM memory chip produced by Micron Technology. Key features include:
1. Capacity: 2GB (128Mx16 configuration).
2. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
3. Interface: DDR3, with a 1.5V supply voltage.
4. Organization: Available in x16 configuration, suitable for applications requiring high bandwidth and large memory capacity.
5. Latency: Offers low latency for fast data access, ideal for computing applications.
6. Package: Typically available in a compact package, which aids in space-efficient designs.
7. Thermal and Electrical Characteristics: Designed for low power consumption, contributing to energy efficiency.
Overall, this memory chip is suitable for a variety of applications including laptops, desktops, and servers, where high performance and reliability are essential.

Package

The MT47H128M16RT-25E AAT:C is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) form factor. This package type is designed for efficient space utilization and thermal performance in applications like mobile devices and computing systems.

Pinout

The MT47H128M16RT-25E AAT:C is a DRAM memory chip from Micron Technology, specifically a DDR3 SDRAM device. It features a total of 78 pins.
The primary functions of these pins include data input/output, address, control signals, and power supply connections. Key pin functions include:
- DQ0-DQ15: Data input/output pins (16 bits).
- A0-A13: Address pins for row and column addresses (13 bits).
- BA0-BA1: Bank address pins (2 bits).
- CS: Chip select, to enable the device.
- RAS: Row address strobe, for row selection.
- CAS: Column address strobe, for column selection.
- WE: Write enable, to control write operations.
- CK and CK#: Clock inputs (differential).
- VDD/VDDQ: Power supply pins.
- VSS: Ground pins.
For detailed specifications, consulting the data sheet is recommended.

Manufacturer

The manufacturer of the MT47H128M16RT-25E AAT:C is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in the production of DRAM, NAND flash memory, and other semiconductor components. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and industrial applications. The company is renowned for its innovation in memory technology and plays a pivotal role in the semiconductor industry, providing critical components for various electronic devices.

Application

The MT47H128M16RT-25E AAT:C is a DDR3 SDRAM memory chip used in various applications, including laptops, desktops, servers, and embedded systems. It supports high-speed data processing and is suitable for graphics applications, networking equipment, and consumer electronics. Its reliability and performance make it ideal for applications requiring efficient memory storage and retrieval in computing and telecommunications environments.

Equivalent

The MT47H128M16RT-25E AAT:C chip is a DDR3 SDRAM memory component. Equivalent products include:
1. Hynix H5TQ1G83EFR
2. Samsung K4B4G1646F-BY
3. Micron MT41K128M16HA-125
4. Nanya NT5CC128M16HR
Ensure compatibility with your specific application and check for specifications such as speed, voltage, and timing.